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| UNISONIC TECHNOLOGIES CO., 2SC3647 HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES NPN EPITAXIAL SILICON TRANSISTOR * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs 1 SOT-89 *Pb-free plating product number: 2SC3647L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SC3647-AB3-R 2SC3647L-AB3-R Package SOT-89 Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., 1 QW-R208-039,A 2SC3647 PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25) SYMBOL VCBO VCEO VEBO IC ICP PC TJ TSTG RATINGS 120 100 6 2 3 500 150 -40 ~ +150 UNIT V V V A A mW C C ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified) PARAMETER C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Collector Cutoff Curent Emitter Cutoff Curent Output Capacitance DC Current Gain Turn-ON Time Storage Time Fall Time Gain-Bandwidth Product SYMBOL VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Cob hFE tON tSTG tF fT TEST CONDITIONS IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 10A, IE =0 IC = 1mA, RBE = IE = 10A, IC=0 VCB = 100V, IE =0 VEB = 4V, IC =0 VCB = 10V, f =1MHz VCE = 5V, IC = 100mA See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VCE = 10V, IC = 100mA MIN TYP 0.13 0.85 MAX 0.4 1.2 120 100 6 100 100 16 100 80 1000 50 120 400 UNIT V V V V V nA nA pF ns ns ns MHz CLASSIFICATION OF hFE RANK RANGE R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 SWITCHING TIME TEST CIRCUIT PW=20S DC1% INPUT VR 50 + 100 -5V 10IB1= -10IB2=I C=0.7A Unit (Resistance:, Capacitance:F ) + 470 50V IB1 RB IB2 RL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R208-039,A 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS IC - VCE IC - V CE 5. 0m A 2.0 A 50 m Collector Current, Ic (A) Collector Current, Ic (A) 1.6 40mA 30mA 20 m A 10mA 5mA 1.0 A 4.5m 4.0mA 3.5mA 3.0mA 2.5mA 0.8 1.2 0.6 2.0mA 0.8 3mA 2mA 1mA IB = 0 0 1 2 3 4 5 Collector to Emitter Voltage, VCE (V) 0.4 1.5mA 1.0mA 0.4 0 0.2 0 0.5mA IB = 0 0 10 20 30 40 50 Collector to Emitter Voltage, VCE (V) IC - VBE 2.4 2.0 Collector Current, Ic (A) hFE - IC VCE = 5V 1000 7 5 DC Current Gain, hFE VCE = 5V 1.6 1.2 75 2 5 - 25 3 2 T a = 75 25 - 25 0.8 0.4 0 100 7 5 Ta = 0 0.2 0.4 0.6 0.8 1.0 1.2 3 70.01 2 3 5 7 0.1 2 3 5 7 1.0 23 Base to Emitter Voltage, VBE (V) cob - VCB 100 7 Output Capacitance, c ob (pF) Collector to Emitter Saturation Voltage, V CE (sat) (mV) Collector Current, IC (A) VCE (sat) - IC F = 1MHz 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 0.01 2 -25 IC/IB = 10 10 7 5 3 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Ta = 75 2 5 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector to Base Voltage, VCB (V) Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R208-039,A 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR VBE ( sat) - IC ASO IC/IB = 10 5 3 2 Collector Current, IC (A) TYPICAL CHARACTERICS(Cont.) 10 ICP IC 10 Base to Emitter Saturation Voltage, VBE ( sat) (V) 7 5 3 2 1.0 7 5 3 2 0m s 1m 10 s m s DC Op e ra 1.0 7 5 3 7 0.01 Ta = -25 75 25 2 3 5 7 0.1 23 5 7 1.0 23 2 0.1 7 5 3 2 One Pulse - Ta = 25 0.01 Mounted on ceramic board 7 (250mm x 0.8mm) 5 5 7 1.0 2 3 5 7 10 tio n 23 5 7 100 2 Collector Current, IC (A) Collector to Emitter Voltage, VCE (V) PC - Ta 1.8 1.6 Collector Dissipation, Pc (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 Infin ite h e at sin k 80 100 120 140 160 Ambient Temperature, Ta () UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R208-039,A |
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